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BAS16HT1D Datasheet

  • BAS16HT1D

  • Switching Diode

  • 4頁

  • ONSEMI

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BAS16HT1
Preferred Device
Switching Diode
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
1
CATHODE
2
ANODE
http://onsemi.com
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (Note 1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
1. FR-4 Minimum Pad.
Symbol
P
D
Max
200
1.57
R
胃JA
T
J
, T
stg
635
鈭?5 to
150
Unit
mW
mW/擄C
擄C/W
擄C
1
SOD鈭?23
CASE 477
STYLE 1
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
MARKING DIAGRAM
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 75 Vdc)
(V
R
= 75 Vdc, T
J
= 150擄C)
(V
R
= 25 Vdc, T
J
= 150擄C)
Reverse Breakdown Voltage
(I
BR
= 100
碌A(chǔ)dc)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50
鈩?
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0 Vdc,
R
L
= 500
鈩?
I
R
鈭?/div>
鈭?/div>
鈭?/div>
V
(BR)
V
F
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
C
D
V
FR
t
rr
Q
S
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
715
855
1000
1250
2.0
1.75
6.0
45
pF
Vdc
ns
pC
75
1.0
50
30
鈭?/div>
Vdc
mV
碌A(chǔ)dc
A6
M
A6 M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
BAS16HT1
Package
SOD鈭?23
Shipping鈥?/div>
3000/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2004
1
February, 2004 鈭?Rev. 3
Publication Order Number:
BAS16HT1/D

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