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BAS16DXV6T1/D Datasheet

  • BAS16DXV6T1/D

  • Dual Switching Diode

  • 68.80KB

  • 6頁

  • ETC

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BAS16DXV6T1,
BAS16DXV6T5
Preferred Device
Dual Switching Diode
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
ms
Symbol
V
R
I
F
I
FM(surge)
Max
75
200
500
Unit
V
mA
mA
6
4
1
3
http://onsemi.com
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
1. FR-4 @ Minimum Pad
R
qJA
T
J
, T
stg
T
A
= 25擄C
R
qJA
T
A
= 25擄C
Symbol
P
D
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
- 55 to
+150
Unit
mW
mW/擄C
擄C/W
6
54
2
3
1
SOT-563
CASE 463A
PLASTIC
MARKING DIAGRAM
Symbol
P
D
Unit
mW
A6 D
mW/擄C
擄C/W
擄C
A6 = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
BAS16DXV6T1
BAS16DXV6T5
Package
SOT-563
SOT-563
Shipping
4 mm pitch
4000/Tape & Reel
2 mm pitch
8000/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2003
1
February, 2003 - Rev. 0
Publication Order Number:
BAS16DXV6T1/D

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