BAS16
Discrete POWER & Signal
Technologies
BAS16
CONNECTION DIAGRAM
3
3
3
A6
2
1
2
1
2 NC
SOT-23
1
High Conductance Ultra Fast Diode
Sourced from Process 1P. See BAV99 for characteristics.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25擄C unless otherwise noted
Parameter
Value
75
200
600
700
1.0
2.0
-50 to +150
150
Units
V
mA
mA
mA
A
A
擄C
擄C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃
JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max
BAS16
350
2.8
357
Units
mW
mW/擄C
擄C/W
漏1997
Fairchild Semiconductor Corporation
1
2
