鈥?/div>
Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
BAS116LT1
Motorola Preferred Device
3
1
2
3
CATHODE
1
ANODE
CASE 318 鈥?08, STYLE 8
SOT鈥?23 (TO 鈥?236AB)
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BAS116LT1 = JV
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100
碌A(chǔ)dc)
Reverse Voltage Leakage Current (VR = 75 Vdc)
Reverse Voltage Leakage Current
(VR = 75 Vdc, TJ = 150擄C)
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage
(IF = 10 mAdc)
Forward Voltage
(IF = 50 mAdc)
Forward Voltage
(IF = 150 mAdc)
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4
0.3
V(BR)
IR
VF
75
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5.0
80
900
1000
1100
1250
2.0
3.0
Vdc
nAdc
mV
CD
trr
pF
碌s
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
BAS116LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
單二極管/整流器
-
標(biāo)準(zhǔn)
75V
200mA（DC）
1.25V @ 150mA
小信號 =
3µs
5nA @ 75V
2pF @ 0V，1MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
BAS116LT1OSCT
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