鈥?/div>
Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
3
CATHODE
1
ANODE
BAS116LT1
ON Semiconductor Preferred Device
3
1
2
CASE 318鈥?8, STYLE 8
SOT鈥?3 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BAS116LT1 = JV
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
BR
= 100
碌A(chǔ)dc)
Reverse Voltage Leakage Current (V
R
= 75 Vdc)
Reverse Voltage Leakage Current
(V
R
= 75 Vdc, T
J
= 150擄C)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage
(I
F
= 10 mAdc)
Forward Voltage
(I
F
= 50 mAdc)
Forward Voltage
(I
F
= 150 mAdc)
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz)
Reverse Recovery Time (I
F
= I
R
= 10 mAdc) (Figure 1)
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
V
(BR)
I
R
V
F
75
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
80
900
1000
1100
1250
2.0
3.0
Vdc
nAdc
mV
C
D
t
rr
pF
碌s
1
March, 2001 鈥?Rev. 2
Publication Order Number:
BAS116LT1/D
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