VISHAY
BAR64V-04
Vishay Semiconductors
RF PIN Diodes - Dual, Series in SOT-23
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-04 was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
2
1
1
2
18256
3
3
Features
鈥?High reverse Voltage
鈥?Small reverse capacitance
鈥?High breakdown voltage
Mechanical Data
Case:
Plastic case (SOT-23)
Weight:
approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile , wireless and TV-Applications
Parts Table
Part
BAR64V-04
Ordering code
BAR64V-04-GS18 or BAR64V-04-GS08
D4
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 擄C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test condition
Symbol
V
R
I
F
T
j
T
stg
Value
100
100
150
- 55 to + 150
Unit
V
mA
擄C
擄C
Electrical Characteristics
T
amb
= 25 擄C, unless otherwise specified
Parameter
Reverse voltage
Reverse current
Forward voltage
Test condition
I
R
= 10
碌A
V
R
= 50 V
I
F
= 50 mA
Symbol
V
R
I
R
V
F
Min
100
50
1.1
Typ.
Max
Unit
V
nA
V
Document Number 85694
Rev. 1.2, 26-Apr-04
www.vishay.com
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