BAR63-04S
Silicon PIN Diode
Preliminary data
PIN diode for high speed switching
of RF signals
Low forward resistance, small inductance
Very low capacitance
For frequencies up to 3 GHz
4
5
6
Junction - soldering point
1)
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
1
3
VPS05604
C1/A2
6
C3
5
A4
4
D1
D2
D3
D4
1
A1
2
C2
3
A3/C4
EHA07464
Type
BAR63-04S
Marking
G4s
Pin Configuration
Package
1=A1 2=C2 3=A3/C4 4=A4 5=C3 6=C1/A2 SOT363
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation,
T
S
= 115 擄C
Junction temperature
Operating temperature range
Storage temperature
Symbol
V
R
I
F
P
tot
T
j
T
op
T
stg
Value
50
100
250
150
-55 ... 150
-55 ... 150
Unit
V
mA
mW
擄C
擄C
Thermal Resistance
R
thJS
180
K/W
1
Aug-27-2001