BAQ33...BAQ35
Vishay Telefunken
Silicon Planar Diodes
Features
D
Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
94 9371
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
Test Conditions
Type
BAQ33
BAQ34
BAQ35
Symbol
V
R
V
R
V
R
I
FSM
I
F
T
j
T
stg
Value
30
60
125
2
200
200
鈥?5...+200
Unit
V
V
V
A
mA
擄
C
擄
C
Peak forward surge current
Forward current
Junction temperature
Storage temperature range
t
p
=1
m
s
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Test Conditions
I
F
=100mA
E 300lx, V
R
E 300lx, V
R
, T
j
=125
擄
C
E 300lx, V
R
=15V
E 300lx, V
R
=30V
E 300lx, V
R
=60V
I
R
=5
m
A, t
p
/T=0.01, t
p
=0.3ms
Type
Symbol
V
F
I
R
I
R
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
C
D
Min
Typ
1
0.5
0.5
0.5
40
70
140
3
Max
1
3
0.5
1
1
1
Unit
V
nA
m
A
nA
nA
nA
V
V
V
pF
Breakdown voltage
g
x
x
x
x
x
BAQ33
BAQ34
BAQ35
BAQ33
BAQ34
BAQ35
Diode capacitance
V
R
=0, f=1MHz
Document Number 85537
Rev. 2, 01-Apr-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (3)
1
2
3
