LESHAN RADIO COMPANY, LTD.
Silicon PIN diode
FEATURES
路 High voltage, current controlled
路 RF resistor for RF attenuators and switches
路 Low diode capacitance
路 Low diode forward resistance
路 Very low series inductance
路 For applications up to 3 GHz.
APPLICATIONS
路 RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small plastic SMD package.
BAP64 鈥?02
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
鈥?/div>
鈥?/div>
鈥?/div>
-65
-65
MAX.
175
100
715
+150
+150
UNIT
V
mA
mW
擄C
擄C
I
T
s
=90擄C
ELECTRICAL CHARACTERISTICS
T
j
= 25擄C unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse current
diode capacitance
CONDITIONS
I
F
=50 mA
V
R
=175V
V
R
=20V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
蟿
L
charge carrier life time
when switched from I
F
=10 mA to
I
R
= 6 mA; R
L
= 100
鈩?
measured at I
R
=3 mA
L
Note
S
TYP.
0.95
鈥?/div>
鈥?/div>
0.48
0.35
0.23
20
10
2
0.7
1.55
MAX.
1.1
10
1
鈥?/div>
鈥?/div>
0.35
40
20
3.8
1.35
鈥?/div>
UNIT
V
碌A(chǔ)
碌A(chǔ)
pF
pF
pF
鈩?/div>
鈩?/div>
鈩?/div>
鈩?/div>
碌s
series inductance
0.6
鈥?/div>
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S26鈥?/2
BAP64-02 產(chǎn)品屬性
1.55μs
表面貼裝
0.85mm
I-IGIA
1.25 x 0.85 x 0.65mm
衰減器、開(kāi)關(guān)
2
-65 °C
1.35 mA @ 100
0.35pF
175V
1.1V
100mA
+150 °C
單
1.25mm
0.65mm
BAP64-02相關(guān)型號(hào)PDF文件下載
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