Dual Series Switching Diode
0.016 (0.40)
(C)
R 0.05
(0.002)
0.087 (2.20)
0.071 (1.80)
.051(1.30)
Features
Small surface mounting type
High reliability
High speed ( t
rr
< 1.5 ns )
MIN
(B)
(A)
0.055 (1.40)
0.047 (1.20)
0.089 (2.30)
0.079 (2.00)
0.017 (0.43)
MIN
0.012 (0.30)
0.0010 (0.25)
0.0004 (0.10)
Silicon epitaxial planar type
0.043 (1.10)
Mechanical data
Case : SOT-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Mounting P
osition : Any
0.031 (0.80)
Dimensions in inches and (millimeters)
SINGLE(Alt)
COMMON ANODE COMMON CATHODE
0.026 (0.70)
MIN.
BAL99W
BAW56W
BAV70W
BAV99W
Formosa MS
SOT-323
SERIES
BAL99W
BAW56W
BAV70W
BAV99W
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature
V
R
= 0
t
p
= 1 us
CONDITIONS
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
D
T
j
T
STG
-55
MIN.
TYP.
MAX.
70
70
2.0
450
215
715
225
175
+150
UNIT
V
V
A
mA
mA
mA
mW
o
o
C
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward voltage
I
F
= 10mA
I
F
= 150mA
V
R
= 70V
Reverse current
V
R
= 20V , T
j
= 150
V
R
= 70V , T
j
= 150
Breakdown current
Diode capacitance
Reverse recovery time
o
o
CONDITIONS
Symbol
V
F
V
F
I
R
MIN.
TYP.
MAX.
0.855
1.250
2.5
30
50
UNIT
V
V
uA
uA
uA
V
C
C
I
R
I
R
V
(BR)
C
D
t
rr
70
I
R
= 100uA , T
P
/T = 0.01 T
P
= 0.3ms
V
R
= 0 , f = 1MHz , V
HF
= 50mV
I
F
=10mA, V
R
= 10mA, I
RR
= 0.1 X I
R
, R
L
=100
OHM
1.5
6
pF
ns
1
2
