ON Semiconductort
Switching Diode
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Symbol
V
R
I
F
Value
70
100
Unit
Vdc
BAL99LT1
3
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
ANODE
3
CASE 318鈥?8, STYLE 18
SOT鈥?3 (TO鈥?36AB)
CATHODE
2
DEVICE MARKING
BAL99LT1 = JF
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150擄C)
(V
R
= 70 Vdc, T
J
= 150擄C)
Reverse Breakdown Voltage
(I
R
= 100
碌A(chǔ)dc)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Recovery Current
(I
F
= 10 mAdc, V
R
= 5.0 Vdc, R
L
= 500
鈩?
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 100
鈩?
measured at I
R
= 1.0 mAdc)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
I
R
鈥?/div>
鈥?/div>
鈥?/div>
V
(BR)
V
F
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Q
S
C
D
t
rr
V
FR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
715
855
1000
1250
45
1.5
6.0
1.75
pC
pF
ns
Vdc
70
2.5
30
50
鈥?/div>
Vdc
mV
碌A(chǔ)dc
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
BAL99LT1/D
BAL99LT1/D相關(guān)型號(hào)PDF文件下載
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