鈭?/div>
+125
Unit
V
dBm
擄C
擄C
*Note : Each maximum rating is guaranteed independently .
ELECTRICAL CHARACTERISTICS(Ta=25擄C
, ZG=ZL=50鈩?
Limits
Symbol
f
Iq
Ict
*1
4.5
Parameter
Frequency
Quiescent current
Total current
Total current
Power added efficiency
Power Gain
Adjacent channel power at 900KHz
Adjacent channel power at 1.98MHz
2nd harmonics
3rd harmonics
Noise in RX band
Total current
Total current
Power Gain
Adjacent channel power at 900KHz
Test conditions
Unit
MAX
925
70
420
10
-
-
-47
-57
-27
-30
-135
122
5.5
-
-47
-58
MHz
mA
mA
mA
%
dB
dBc
dBc
dBc
dBc
dBm/Hz
mA
mA
dB
dBc
dBc
MIN
887
TYP
-
55
395
5.3
40
27.5
-50
-60
-30
-45
-138
107
2.5
24
-55
-66
Vc=3.5V,Vcb=Vref=2.8V
No Signal
Po=27.5dBm (IS-95B)
Vc1=Vc2=3.5V
Vcb=Vref=2.8V
-
-
-
-
25
-
-
-
-
-
Icb+Iref
hadd
Gain
ACP
*2
2sp
3sp
Rxnoise
Ict
*1
Icb+Iref
Gain
ACP
*2
Po=15dBm (IS-95B)
Vc1=Vc2=1.2V
Vcb=Vref=2.8V
-
-
21.5
-
-
Adjacent channel power at 1.98MHz
*1: Ict=Ic1+Ic2, *2:ACP=ACP (30KHz band at 900/1980KHz)-Po(1.23MHz band)
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as
(i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
Created Date: Apr.2004
1
