B2N7002(0.1A60V) Datasheet

IC型號(hào)：
B2N7002(0.1A60V)
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B02N7002

N-Channel Power MOSFET

鈥?/div>

Advanced Process Technology

Ultra low On-Resistance Provides Higher Efficiency

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS (on) Specified at Elevated Temperature

DESCRIPTION

DSS

= 60V

鹵115m

ABSOLUTE MAXIMUM RATINGS

Rating

Drain Source Voltage

Drain-Gate Voltage(R

=1.0M惟)

Drain to Current 鈥?Continuous

錛?/div>

Pulsed

Gate-to-Source Voltage 鈥?Continue

錛?/div>

Non-repetitive

Total Power Dissipation

Derate above 25

鈩?/div>

Single Pulse Drain-to-Source Avalanche Energy 鈥?T

= 25

鈩?/div>

= 50V, V

= 10V, I

=0.8A, L = 30mH, R

=25惟)

Operating and Storage Temperature Range

Thermal Resistance 鈥?Junction to Ambient

Maximum Lead Temperature for Soldering Purpose, 1/8鈥?from case for 10 seconds

Symbol

DSS

DGR

GSM

, T

STG

Value

鹵115

鹵800

鹵

225

1.8

9.6

-55 to 150

417

300

Unit

mW/鈩?/div>

鈩?/div>

鈩?W

鈩?/div>

胃

How to reach us :

Hong Kong Headquarter :Unit C, 11/F, Wing Hang Insurance

Building 11 Wing Kut Street, Central, Hong Kong

Shenzhen Office :Room 4A008, 4/F, Sun Asia Electronic City,

Zhonghang Road ,Shenzhen, China.

e-mail: info@funart.com.hk

Tel:錛?52錛?5950393

Fax:錛?52錛?5588160

Tel:錛?6錛?55 6130 6688

Fax:錛?6錛?55 6130 6667

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