LITE-ON
SEMICONDUCTOR
B170 thru B1100
REVERSE VOLTAGE -
70
to
100
Volts
FORWARD CURRENT -
1.0
Ampere
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
SMA
SMA
A
B
C
DIM.
A
B
C
D
E
F
F
D
G
H
MIN.
4.06
2.29
1.27
0.15
4.83
0.05
2.01
0.76
MAX.
4.57
2.92
1.63
0.31
5.59
0.20
2.62
1.52
G
H
E
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
鈩?/div>
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
B170
70
49
70
B180
80
56
80
1.0
30
0.79
0.69
I
R
C
J
R
0JL
V
mA
pF
C/W
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
B190
90
63
90
B1100
100
70
100
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
@T
L
=100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forward
Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
A
@T
J
=25 C
@T
J
=100 C
@T
J
=25 C
@T
J
=100 C
V
F
0.5
5.0
30
25
-55 to +125
-55 to +150
T
J
T
STG
C
C
REV. 2, 01-Dec-2000, KSHA02
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
1
2
