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KSB1366

KSB1366

LOW FREQUENCY POWER AMPLIFIER

鈥?Complement to KSD2012

1

TO-220F

2.Collector

3.Emitter

1.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Base Current

Collector Dissipation (T

a

=25擄C)

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Parameter

Value

- 60

- 60

-7

-3

- 0.5

2

25

150

- 55 ~ 150

Units

V

V

V

A

A

W

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CEO

I

CBO

I

EBO

h

FE1

h

FE2

V

CE

(sat)

V

BE

(on)

f

T

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Current Gain Bandwidth Product

Test Condition

I

C

= - 50mA, I

B

= 0

V

CB

= - 60V, I

E

= 0

V

EB

= - 7V, I

C

= 0

V

CE

= - 5V, I

C

= - 0.5A

V

CE

= - 5V, I

C

= - 3A

I

C

= - 2A, I

B

= - 0.2A

V

CE

= - 5V, I

C

= - 0.5A

V

CE

= - 5V, I

C

= - 0.5A

100

20

- 0.5

- 0.7

9

Min.

- 60

Typ.

Max.

- 100

- 100

320

-1

-1

V

V

MHz

Units

V

碌A(chǔ)

碌A(chǔ)

h

FE

Classification

Classification

h

FE1

Y

100 ~ 200

G

150 ~ 320

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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