Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
Unit: mm
s
Features
q
q
q
q
16.2鹵0.5
12.5
3.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
鈥?30
鈥?0
鈥?
鈥?0
鈥?0
100
3
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
21.0鹵0.5
15.0鹵0.2
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with
one screw
0.7
15.0鹵0.3
11.0鹵0.2
5.0鹵0.2
3.2
蠁3.2鹵0.1
2.0鹵0.2
2.0鹵0.1
1.1鹵0.1
5.45鹵0.3
10.9鹵0.5
1
2
3
0.6鹵0.2
1:Base
2:Collector
3:Emitter
TOP鈥? Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 鈥?00V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0.1A
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?0A
I
C
= 鈥?A, I
B
= 鈥?0.4A
I
C
= 鈥?0A, I
B
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?0.4A
I
C
= 鈥?0A, I
B
= 鈥?A
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 10MHz
I
C
= 鈥?A, I
B1
= 鈥?0.8A, I
B2
= 0.8A,
V
CC
= 鈥?0V
25
0.5
1.2
0.2
鈥?0
45
90
30
鈥?0.5
鈥?.5
鈥?.5
鈥?.5
V
V
V
V
MHz
碌s
碌s
碌s
260
min
typ
max
鈥?0
鈥?0
Unit
碌A(chǔ)
碌A(chǔ)
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
Note: Ordering can be made by the common rank (PQ rank h
FE2
= 90 to 260) in the rank classification.
1
1
2
3
