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B1148 Datasheet

  • B1148

  • Silicon PNP epitaxial planar type(For low-voltage switching)

  • 61.38KB

  • 3頁(yè)

  • PANASONIC

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Power Transistors
2SB1148, 2SB1148A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1752 and 2SD1752A
Unit: mm
7.0鹵0.3
3.0鹵0.2
3.5鹵0.2
s
Features
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
鈥?0
鈥?0
鈥?0
鈥?0
鈥?
鈥?0
鈥?0
15
1.3
150
鈥?5 to +150
Unit
V
7.2鹵0.3
0.8鹵0.2
1.1鹵0.1
0.85鹵0.1
0.4鹵0.1
1.0鹵0.2
10.0
鈥?.
+0.3
0.75鹵0.1
2.3鹵0.2
4.6鹵0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB1148
2SB1148A
2SB1148
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
emitter voltage 2SB1148A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
3.0鹵0.2
10.2鹵0.3
7.2鹵0.3
V
A
A
1.0 max.
2.5
0.75鹵0.1
0.5 max.
0.9鹵0.1
0 to 0.15
W
藲C
藲C
1.1鹵0.1
1
2
3
2.3鹵0.2
4.6鹵0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB1148
2SB1148A
2SB1148
2SB1148A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CB
= 鈥?0V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0.1A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?0A, I
B
= 鈥?0.33A
I
C
= 鈥?0A, I
B
= 鈥?0.33A
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 10MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
I
C
= 鈥?A, I
B1
= 鈥?0.1A, I
B2
= 0.1A,
V
CC
= 鈥?0V
min
typ
max
鈥?0
鈥?0
鈥?0
Unit
碌A(chǔ)
碌A(chǔ)
V
鈥?0
鈥?0
45
90
260
鈥?0.6
鈥?.5
100
400
0.1
0.5
0.1
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
V
V
MHz
pF
碌s
碌s
碌s
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
2.5鹵0.2
1.0
2.5鹵0.2
1.0
1

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