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B1063 Datasheet

  • B1063

  • For High Power Amplification

  • 3頁

  • PANASONIC

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Power Transistors
2SB1063
Silicon PNP triple diffusion planar type
For high power amplification
0.7
鹵0.1
Unit: mm
10.0
鹵0.2
5.5
鹵0.2
4.2
鹵0.2
Complementary to 2SD1499
鈻?/div>
Features
鈥?/div>
Extremely satisfactory linearity of the forward current transfer ratio h
FE
鈥?/div>
Wide safe operation area
鈥?/div>
High transition frequency f
T
鈥?/div>
Full-pack package which can be installed to the heat sink with one
screw
16.7
鹵0.3
4.2
鹵0.2
2.7
鹵0.2
7.5
鹵0.2
蠁
3.1
鹵0.1
Solder Dip
(4.0)
1.4
鹵0.1
1.3
鹵0.2
0.5
+0.2
鈥?.1
14.0
鹵0.5
0.8
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
鈭?00
鈭?00
鈭?
鈭?
鈭?
40
2.0
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
2.54
鹵0.3
5.08
鹵0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
BE
I
CBO
I
EBO
h
FE1
h
FE2 *
h
FE3
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CB
= 鈭?00
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?0
mA
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.3 A
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.5 A, f
=
1 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
20
170
20
40
20
鈭?
V
MHz
pF
200
Min
Typ
Max
鈭?.8
鈭?0
鈭?0
Unit
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
40 to 80
Q
60 to 120
P
100 to 200
Publication date: February 2003
SJD00039AED
1

B1063 產(chǎn)品屬性

  • Pulse

  • 變壓器音頻和信號(hào)

  • 3 kHz

  • 2 kV

  • - 40 C to + 85 C

  • SMD/SMT

  • 17.65 mm L x 13.11 mm W x 13.46 mm H

  • 4 Ohms

  • 0.8 Ohms

  • Unshielded

  • 60

B1063相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    KEILRIEMEN V TYP B WIRKLAENGE 1060MM
    ETC
  • 英文版
    KEILRIEMEN V TYP B WIRKLAENGE 1060MM
  • 英文版
    For High Power Amplification
    PANASONIC
  • 英文版
    High Power Amplifier Complementary Pair with 2SD1499
    PANASONIC ...
  • 英文版
    For High Power Amplification
    PANASONIC ...
  • 英文版
    SMOKE DETECTORS
    SYSTEMSENSOR [S...
  • 英文版
    ETC
  • 英文版

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