鈥?/div>
This high voltage MOSFET used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and
commutation time. Designed for high voltage, high speed switching application in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operation areas
critical and offer additional and safety margin against unexpected voltage transients.
DESCRIPTION
D
TO-220
V
DSS
= 600V
R
DS (on)
= 1.2
惟
G
S
S
I
D
= 6.0 A
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current 鈥?Continuous
Gate-to-Source Voltage 鈥?Continue
- Non-repetitive
Total Power Dissipation
Derate Above 25鈩?/div>
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy 鈥?T
J
= 25
鈩?/div>
(V
DD
= 100V, V
GS
= 10V, I
L
=6A, L = 10mH, R
G
=25惟)
Thermal Resistance 鈥?Junction to Case
- Junction to Ambient
Maximum Led Temperature for Solding Purpose, 1/8鈥?from case for 10 seconds
Symbol
I
D
V
GS
V
GSM
P
D
T
J
, T
STG
E
AS
螛
JC
螛
JA
T
L
Value
6.0
+/- 20
+/- 40
125
1.0
-55 to 150
180
1.0
62.5
260
Unit
A
V
V
W
W/鈩?/div>
鈩?/div>
mJ
鈩?W
鈩?/div>
How to reach us :
Hong Kong Headquarter :Unit C, 11/F, Wing Hang Insurance
Building 11 Wing Kut Street, Central, Hong Kong
Shenzhen Office :Room 4A008, 4/F, Sun Asia Electronic City,
Zhonghang Road ,Shenzhen, China.
e-mail: info@funart.com.hk
Tel:錛?52錛?5950393
Fax:錛?52錛?5588160
Tel:錛?6錛?55 6130 6688
Fax:錛?6錛?55 6130 6667
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N-Channel Power MOSFET
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埸效應(yīng)管
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