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AWT6302 Datasheet

  • AWT6302

  • PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

  • 8頁(yè)

  • ANADIGICS   ANADIGICS

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AWT6302
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.1
FEATURES
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鈥?/div>
鈥?/div>
鈥?/div>
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InGaP HBT Technology
High Efficiency: 40%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
碌A(chǔ)
V
REF
= +2.8 V (+2.7 V min over temp)
Optimized for a 50
鈩?/div>
System
Low Profile Miniature Surface Mount Package:
1.1mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4mm x 4mm Package
APPLICATIONS
鈥?/div>
鈥?/div>
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
M9 Package
8 Pin 3mm x 3mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6302 meets the increasing demands for
higher efficiency and linearity in CDMA 1X handsets,
while reducing pcb area by 44%. The package
pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The PA module is optimized for V
REF
= +2.8 V, a
requirement for compatibility with the Qualcomm廬
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
3mm x 3mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50
鈩?/div>
system.
GND at slug (pad)
V
CC
1
8
V
CC
RF
IN
2
7
RF
OUT
V
MODE
3
Bias Control
6
GND
V
REF
4
5
GND
Figure 1: Block Diagram
04/2003

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