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AWT6276RM20P8 Datasheet

  • AWT6276RM20P8

  • HELP PCS/WCDMA 3.4 V/29.5 dBm Linear Power Amplifier Module

  • 8頁

  • ANADIGICS   ANADIGICS

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AWT6276R
HELP
TM
PCS/WCDMA 3.4 V/29.5 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.4
FEATURES
鈥?/div>
鈥?/div>
InGaP HBT Technology
High Efficiency:
45 % @ P
OUT
= +29.5 dBm
21 % @ P
OUT
= +16 dBm
16 % @ P
OUT
= +7 dBm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low Quiescent Current: 15 mA
Low Leakage Current in Shutdown Mode: <1
碌A(chǔ)
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
鈩?/div>
System
Low Profile Miniature Surface Mount Package:
1.1 mm Max
RoHS Compliant Package, 250
o
C MSL-3
HSDPA Compliant (no backoff)
AWT6276R
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
APPLICATIONS
鈥?/div>
鈥?/div>
Dual Band WCDMA Wireless Handsets
Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6276 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm廬 6275 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
鈩?/div>
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
12/2005

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