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AWT6274RM20P8 Datasheet

  • AWT6274RM20P8

  • HELP PCS/WCDMA 3.4V/29dBm Linear Power Amplifier Module

  • 8頁(yè)

  • ANADIGICS   ANADIGICS

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AWT6274
HELP
TM
PCS/WCDMA 3.4V/29dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.8
FEATURES
鈥?/div>
鈥?/div>
InGaP HBT Technology
High Efficiency:
43 % @ P
OUT
= +29 dBm
21 % @ P
OUT
= +16 dBm
15 % @ P
OUT
= +7 dBm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low Quiescent Current: 15 mA
Low Leakage Current in Shutdown Mode: <1
碌A(chǔ)
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
鈩?/div>
System
Low Profile Miniature Surface Mount Package:
1.1 mm Max
RoHS Compliant Package, 250
o
C MSL-3
HSDPA Capable
Dual Band WCDMA Wireless Handsets
Dual Mode 3GPP Wireless Handsets
AWT6274
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
APPLICATIONS
PRODUCT DESCRIPTION
The AWT6274 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm廬 6275 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
鈩?/div>
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
10/2005

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