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AWT6271 Datasheet

  • AWT6271

  • HELP Cellular/WCDMA 3.4V/28dBm Linear Power Amplifier Module

  • 8頁

  • ANADIGICS   ANADIGICS

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AWT6271
HELP
TM
Cellular/WCDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.8
FEATURES
鈥?/div>
鈥?/div>
InGaP HBT Technology
High Efficiency:
45 % @ P
OUT
= +28 dBm
20 % @ P
OUT
= +16 dBm
15 % @ P
OUT
= +7 dBm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode: <1
碌A(chǔ)
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
鈩?/div>
System
Low Profile Miniature Surface Mount Package: 1.1
mm Max
RoHS Compliant Package, 250
o
C MSL-3
HSDPA Capable
AWT6271
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
APPLICATIONS
鈥?/div>
鈥?/div>
Dual Band WCDMA Wireless Handsets
Dual Mode 3GPP Wireless Handsets
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable bias
modes that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
increase handset talk and standby time. The self-
contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
鈩?/div>
system.
PRODUCT DESCRIPTION
The AWT6271 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm廬 6250 chipset. The
device is manufactured on an advanced InGaP HBT
GND at slug (pad)
V
REF
1
10
GND
GND
RF
OUT
GND
V
CC
V
MODE
2
GND
3
RF
IN
V
CC
4
Bias Control
9
8
7
5
6
Figure 1: Block Diagram
03/2006

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