鈥?/div>
Dual Mode 3GPP Wireless Handsets
M7 Package
10 Pin 4 x 4 x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6252 meets the increasing demands for
higher output power in 3GPP 1XRTT handsets. The PA
module is optimized for V
REF
= +2.85 V, a requirement
for compatibility with the Qualcomm廬 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 x 4 x 1.5 mm surface
mount package incorporates matching networks
optimized for output power, efficiency, and linearity in a
50
鈩?/div>
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
03/2004
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