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AWT6251M7P8 Datasheet

  • AWT6251M7P8

  • PCS/WCDMA 3.4V/27.5 dBm Linear Power Amplifier Module

  • 295.80KB

  • 12頁(yè)

  • ANADIGICS   ANADIGICS

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AWT6251
PCS/WCDMA 3.4V/27.5 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
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InGaP HBT Technology
High Efficiency: 38%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
碌A(chǔ)
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
鈩?/div>
System
Low Profile Miniature Surface Mount Package:
1.56 mm Max
RoHS Compliant Package Option, 250
o
C MSL-3
AWT6251
APPLICATIONS
鈥?/div>
Dual Mode 3GPP Wireless Handsets
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6251 meets the increasing demands for
higher output power in 3GPP handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm廬 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.5 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
鈩?/div>
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
06/2005

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