AWT6167 Datasheet

IC型號(hào)：
AWT6167
PDF描述：
GSM900/DCS Dual Band Power Amplifier Module With Integrated ...
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211.26KB
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12頁
芯片廠家：
ANADIGICS

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AWT6167

GSM900/DCS

Dual Band Power Amplifier Module

With Integrated Power Control

FEATURES

鈥?/div>

Integrated Vreg (regulated supply)

Harmonic Performance

鈮?/div>

-25 dBm

High Efficiency (PAE) at Pmax:

-GSM900, 56 %

-DCS, 53 %

+35 dBm GSM900 Output Power at 3.5 V

+33 dBm DCS Output Power at 3.5 V

55 dB dynamic range

GPRS Class 12 Capable

ADVANCED PRODUCT INFORMATION - Rev 0.1

AWT6167

APPLICATIONS

鈥?/div>

Dual Band Handsets & PDAs

18 Pin

6 mm x 6 mm x 1.3 mm

Amplifier Module

PRODUCT DESCRIPTION

As with previous generations, the AWT6167

integrated CMOS power control scheme simplifies

the design of the transmitter by eliminating the need

for external power control circuitry.

The AWT6167 input and output terminals are internal

matched to 50 ohms and DC blocked, reducing the

CC2

number of external components required in the final

application. Both PA die, GSM900 and DCS, are

fabricated using state of the art InGaP HBT

technology, known for it is proven reliability and

temperature stability.

DCS

MATCH

DCS

OUT

CMOS BIAS/Integrated Power Control

BATT

REG

RAMP

GSM900

CC_OUT

H(s)

MATCH

GSM900

OUT

CC2

Figure 1: Block Diagram

01/2005

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