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@vic

TO-126 Plastic-Encapsulate Transistors

AV882 TRANSISTOR錛?NPN

錛?/div>

FEATURES

Power dissipation

P

CM

: 1.25 W錛圱amb=25鈩冿級(jí)

Collector current

I

CM

: 3 A

Collector-base voltage

V

(BR)CBO

: 40 V

Operating and storage junction temperature range

T

J

錛孴

stg

: -55鈩?to +150鈩?/div>

AV882

TO-126

ELECTRICAL CHARACTERISTICS錛圱amb=25鈩?unless otherwise specified

錛?/div>

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V(BR)

CBO

V(BR)

CEO

V(BR)

EBO

I

CBO

I

CEO

I

EBO

H

FE

錛?/div>

1

錛?/div>

DC current gain

H

FE

錛?/div>

2

錛?/div>

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V

CE(sat)

V

BE(sat)

f

T

V

CE

= 2 V, I

C

= 100mA

I

C

= 2A, I

B

= 0.2 A

I

C

= 2A, I

B

= 0.2 A

V

CE

= 5V , Ic=0.1A

f =10MHz

50

32

0.5

2

V

MHz

Test conditions

Ic= 100

渭

A錛?I

E

=0

Ic= 10 mA錛?I

B

=0

I

E

= 100

渭

A錛?I

C

=0

V

CB

= 40 V錛?I

E

=0

V

CE

= 30 V錛?I

B

=0

V

EB

= 6

V錛?I

C

=0

60

MIN

40

30

6

1

400

MAX

UNIT

V

碌A(chǔ)

V

CE

= 2 V, I

C

= 1A

CLASSIFICATION OF HFE(1)

Rank

Range

R

60-120

O

100-200

Y

160-320

GR

200-400

Copyright 漏 Avic Electronics Corp.

1

Website:

http://www.avictek.com

型號(hào)

版本

描述

廠商

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AV882

英文版

TO-126 Plastic-Encapsulate Transistors

ETC

AV882

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