@vic
AV8
5 5 0 S
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
1
APPLICATIONS
*Class B push-pull audio amplifier
*General purpose applications
TO-92
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25擄C ,unless otherwise specified )
PARAMETERS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25擄C
)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
-30
-20
-5
1
-700
150
-65 ~ +150
UNITS
V
V
V
W
mA
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
hFE
1
hFE2
hFE3
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
Cob
TEST CONDITIONS
Ic=-100碌A(chǔ),I
E
=0
Ic=-1mA,I
B
=0
I
E
=-100碌A(chǔ),Ic=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,Ic=0
V
CE
=-1V,Ic=-1mA
V
CE
=-1V,Ic=-150 mA
V
CE
=-1V,Ic=-500mA
Ic=-500mA,I
B
=-50mA
Ic=500mA,I
B
=-50mA
V
CE
=-1V,Ic=-10mA
V
CE
=-10V,Ic=-50mA
V
CB
=10V,I
E
=0
f=1MHz
MIN
-30
-20
-5
TYP
MAX
UNIT
V
V
V
uA
nA
-1
-100
100
120
40
110
400
-0.5
-1.2
-1.0
100
9.0
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
V
V
V
MHz
pF
QW-R201-012,A
1
2
