@vic
AV5401
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
V
CEO
=-150V
*Collector Dissipation:
Pc(max)=625mW
*High current gain
1
APPLICATIONS
*Telephone Switching Circuit
*Amplifier
TO-92
1:EMITTER
2:BASE
3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25擄C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
-160
-150
-5
625
-600
150
-55 ~ +150
UNIT
V
V
V
mW
mA
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
hFE1
hFE2
hFE3
V
CE
(sat)
V
BE
(sat)
f
T
TEST CONDITIONS
Ic=-100碌A(chǔ),I
E
=0
Ic=-1mA,I
B
=0
I
E
=-10碌A(chǔ),Ic=0
V
CB
=-120V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-5V,Ic=-1mA
V
CE
=-5V,Ic=-10mA
V
CE
=-5V,Ic=-50mA
Ic=-10mA,I
B
=-1mA
Ic=-50mA,I
B
=-5mA
Ic=-10mA,I
B
=-1mA
Ic=-50mA,I
B
=-5mA
V
CE
=-10V,Ic=-10mA,f=100MHz
MIN
-160
-150
-6
TYP
MAX
UNIT
V
V
V
nA
nA
-50
-50
80
80
80
400
-0.2
-0.5
-1
-1
400
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
V
V
MHz
100
QW-R201-001,A
1
2
