1. EMITTER
2. BASE
3.
錛?/div>
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEo
I
EBO
H
FE
錛?/div>
1
錛?/div>
DC current gain
H
FE
錛?/div>
2
錛?/div>
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
V
CE
= 1 V , I
C
=50 mA
I
C
= 50 mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5 mA
V
CE
= 20 V, I
C
= 10 mA
60
0.4
0.95
V
V
Test conditions
Ic= 100
渭A 錛?/div>
I
E
=0
I
C
= 1 mA , I
B
=0
I
E
= 100
渭A錛?/div>
I
C
=0
V
CB
= 60 V , I
E
=0
V
CB
= 40 V , I
B
=0
V
EB
= 5
V , I
C
=0
100
MIN
60
40
6
0.1
0.1
0.1
300
MAX
UNIT
V
V
V
渭A
渭A
渭A
V
CE
= 1 V , I
C
= 10 mA
Transition frequency
f
T
f =100
MHz
250
MHz
CLASSIFICATION OF HFE
(1)
Rank
Range
O
100-200
Y
200-300
G
300-400
Copyright 漏 Avic Electronics Corp.
1
Website:
http://www.avictek.com
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英文版
TO-92 Plastic-Encapsulate Transistors
AVICTEK
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英文版
TO-92 Plastic-Encapsulate Transistors
Avic Technology
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英文版
TO-92 Plastic-Encapsulate Transistors
AVICTEK
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英文版
TO-92 Plastic-Encapsulate Transistors
Avic Technology
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