0.5 鈥?12 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-10736
Features
鈥?High Associated Gain:
13.0 dB Typical at 4 GHz
鈥?Low Bias:
V
DS
= 2 V, I
DS
= 25 mA
鈥?High Output Power:
20.0 dBm typical P
1 dB
at 4 GHz
鈥?Low Noise Figure:
1.2 dB Typical at 4 GHz
鈥?Cost Effective Ceramic
Microstrip Package
鈥?Tape-and-Reel Packaging
Option Available
[1]
Description
The ATF-10736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
36 micro-X Package
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
dB
mmho
mA
V
70
70
-4.0
12.0
Min.
Typ. Max.
0.9
1.2
1.4
16.5
13.0
10.5
20.0
12.0
140
130
-1.3
180
-0.5
1.4
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 70 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
Transconductance: V
DS
= 2 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
Note:
1. Refer to PACKAGING section, 鈥淭ape-and-Reel Packaging for Surface Mount Semiconductors.鈥?/div>
5-29
5965-8698E
1
2
3
4
