0.5 鈥?12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10236
Features
鈥?Low Noise Figure:
0.8 dB Typical at 4 GHz
鈥?Low Bias:
V
DS
= 2 V, I
DS
= 20 mA
鈥?High Associated Gain:
13.0 dB Typical at 4 GHz
鈥?High Output Power:
20.0 dBm
Typical P
1dB
at 4 GHz
鈥?Cost Effective Ceramic
Microstrip Package
鈥?Tape-And-Reel Packaging
Option Available
[1]
Description
The ATF-10236 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
low noise figure makes this device
appropriate for use in the first and
second stages of low noise amplifiers
operating in the 0.5-12 GHz frequency
range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
36 micro-X Package
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
dB
mmho
mA
V
80
70
-3.0
12.0
Min.
Typ. Max.
0.6
0.8
1.0
16.5
13.0
10.5
20.0
12.0
140
130
-1.3
180
-0.8
1.0
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 70 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
Transconductance: V
DS
= 2 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
Note:
1. Refer to PACKAGING section, 鈥淭ape-and-Reel Packaging for Surface Mount Semiconductors.鈥?/div>
5965-8697E
5-26
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