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ATF-501P8-TR2 Datasheet

  • ATF-501P8-TR2

  • Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorp...

  • 22頁

  • AGILENT   AGILENT

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Agilent ATF-501P8 High Linearity
Enhancement Mode
[1]
Pseudomorphic HEMT in
2x2 mm
2
LPCC
[3]
Package
Data Sheet
Features
鈥?Single voltage operation
鈥?High Linearity and P1dB
鈥?Low Noise Figure
Description
Agilent Technologies鈥檚 ATF-
501P8 is a single-voltage high
linearity, low noise E-pHEMT
housed in an 8-lead JEDEC-
standard leadless plastic chip
carrier (LPCC
[3]
) package. The
device is ideal as a medium-
power amplifier. Its operating
frequency range is from 400 MHz
to 3.9 GHz.
The thermally efficient package
measures only 2mm x 2mm x
0.75mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85潞C. All devices
are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a
single positive V
gs
, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin Connections and
Package Marking
Source
(Thermal/RF Gnd)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
鈥?Excellent uniformity in product
specifications
鈥?Small package size: 2.0 x 2.0 x
0.75 mm
3
鈥?Point MTTF > 300 years
[2]
鈥?MSL-1 and lead-free
鈥?Tape-and-Reel packaging option
available
Specifications
鈥?2 GHz; 4.5V, 280 mA (Typ.)
Bottom View
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
0Px
Top View
Pin 7 (Drain)
Pin 6
Pin 5
鈥?45.5 dBm Output IP3
鈥?29 dBm Output Power at 1dB gain
compression
鈥?1 dB Noise Figure
鈥?15 dB Gain
鈥?14.5 dB LFOM
[4]
鈥?65% PAE
鈥?23
o
C/W thermal resistance
Applications
鈥?Front-end LNA Q2 and Q3, Driver or
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
鈥?Driver Amplifier for WLAN, WLL/
RLL and MMDS applications
鈥?General purpose discrete E-pHEMT
for other high linearity applications
Note:
Package marking provides orientation and
identification:
鈥?P鈥?= Device Code
鈥渪鈥?= Date code indicates the month of
manufacture.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.

ATF-501P8-TR2 產品屬性

  • ATF-501P8

  • 10,000

  • 分離式半導體產品

  • RF FET

  • -

  • pHEMT FET

  • 2GHz

  • 15dB

  • 4.5V

  • 1A

  • 1dB

  • 280mA

  • 29dBm

  • 7V

  • 8-LPCC

  • 8-LPCC（2x2）

  • 帶卷 (TR)

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