2 鈥?10 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-46101
Features
鈥?High Output Power:
27.0 dBm Typical P
1 dB
at 4 GHz
鈥?High Gain at 1 dB
Compression:
12.0 dB Typical G
1 dB
at 4 GHz
鈥?High Power Efficiency:
38% Typical at 4 GHz
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 1.25 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applica-
tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
100 mil Flange Package
Description
The ATF-46101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica-
tion in the 2 to 10 GHz frequency
range. This nominally 0.5 micron
Electrical Specifications, T
A
= 25擄C
Symbol
P
1 dB
G
1 dB
畏
add
g
m
I
DSS
V
P
Parameters and Test Conditions
[1]
Power Output @ 1 dB Gain Compression:
V
DS
= 9 V, I
DS
= 125 mA
1 dB Compressed Gain: V
DS
= 9 V, I
DS
= 125 mA
Efficiency @ P
1dB
: V
DS
= 9 V, I
DS
= 125 mA
Transconductance: V
DS
= 2.5 V, I
DS
= 125 mA
Saturated Drain Current: V
DS
= 2.5 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 5 mA
f = 4.0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 8.0 GHz
f = 4.0 GHz
Units
dBm
dB
%
mmho
mA
V
200
-5.4
Min.
25.0
9.0
Typ. Max.
27.0
26.5
10.0
5.0
38
100
330
-3.5
450
-2.0
Note:
1. RF Performance is determined by packaging and testing 10 samples per wafer.
5965-8731E
5-98
1
2
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