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ATF-331M4-TR1 Datasheet

  • ATF-331M4-TR1

  • Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniatur...

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  • AGILENT   AGILENT

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Agilent ATF-331M4 Low Noise
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Features
鈥?Low noise figure
鈥?Excellent uniformity in product
specifications
鈥?1600 micron gate width
鈥?Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
Description
Agilent Technologies鈥檚
ATF-331M4 is a high linearity,
low noise pHEMT housed in a
miniature leadless package.
The ATF-331M4鈥檚 small size and
low profile makes it ideal for the
design of hybrid modules and
other space-constraint devices.
Based on its featured perfor-
mance, ATF-331M4 is ideal for
the first or second stage of base
station LNA due to the excellent
combination of low noise figure
and enhanced linearity
[1]
. The
device is also suitable for appli-
cations in Wireless LAN,
WLL/RLL, MMDS, and other
systems requiring super low
noise figure with good intercept
in the 450 MHz to 10 GHz
frequency range.
Note:
1. From the same PHEMT FET family, the
smaller geometry ATF-34143 may also be
considered for the higher gain performance,
particularly in the higher frequency band
(1.8 GHz and up).
MiniPak 1.4 mm x 1.2 mm Package
Px
鈥?Tape-and-reel packaging option
available
Specifications
2 GHz; 4 V, 60 mA (Typ.)
鈥?0.6 dB noise figure
鈥?15 dB associated gain
Pin Connections and
Package Marking
Source
Pin 3
Drain
Pin 4
鈥?19 dBm output power at 1 dB gain
compression
鈥?31 dBm output 3
rd
order intercept
Applications
鈥?Tower mounted amplifier, low noise
amplifier and driver amplifier for
GSM/TDMA/CDMA base stations
鈥?LNA for WLAN, WLL/RLL, MMDS
and wireless data infrastructures
鈥?/div>
General purpose discrete PHEMT for
other ultra low noise applications
Px
Gate
Pin 2
Source
Pin 1
Note:
Top View. Package marking provides orientation,
product identification and date code.
鈥淧鈥?= Device Type Code
鈥渪鈥?= Date code character. A different
character is assigned for each month
and year.

ATF-331M4-TR1 產品屬性

  • ATF-3x143, ATF-3x1M4 OverviewATF-331M4

  • 3,000

  • 分離式半導體產品

  • RF FET

  • -

  • pHEMT FET

  • 2GHz

  • 15dB

  • 4V

  • 305mA

  • 0.6dB

  • 60mA

  • 19dBm

  • 5.5V

  • 0505（1412 公制）

  • MiniPak 1412

  • 帶卷 (TR)

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