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ATF-25735 Datasheet

  • ATF-25735

  • 0.5-10 GHz General Purpose Gallium Arsenide FET

  • 4頁(yè)

  • AGILENT   AGILENT

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0.5鈥?0 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25735
Features
鈥?High Output Power:
19.0 Bm Typical P
1 dB
at 4 GHz
鈥?High Gain:
12.5 dB Typical G
1 dB
at 4 GHz
鈥?Low Noise Figure:
1.2 dB Typical at 4 GHz
鈥?Cost Effective Ceramic
Microstrip Package
microstrip package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
35 micro-X Package
Description
The ATF-25735 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 20 mA
f = 2. 0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f =.6.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units
dB
Min.
Typ. Max.
1.0
1.2
1.4
15.0
13.0
10.5
19.0
12.5
50
50
-3.0
80
100
-2.0
150
-0.8
1.5
G
A
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 20 mA
dB
11.5
dBm
dB
mmho
mA
V
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression:
V
DS
=5 V, I
DS
= 50 mA
1 dB Compressed Gain: V
DS
= 5 V, I
DS
=50 mA
Transconductance: V
DS
=3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
=3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
5-63
5965-8710E

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