0.5 鈥?10 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-25170
Features
鈥?Low Noise Figure:
0.8 dB Typical at 4 GHz
鈥?High Associated Gain:
14.0 dB Typical at 4 GHz
鈥?High Output Power:
21.0 dBm Typical P
1 dB
at 4 GHz
鈥?Hermetic Gold-Ceramic
Microstrip Package
housed in a hermetic, high reliabil-
ity package. Its noise figure makes
this device appropriate for use in
low noise amplifiers operating in
the 0.5-10 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
70 mil Package
Description
The ATF-25170 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 20 mA
f = 4.0 GHz
f = 6 0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
dB
mmho
mA
V
50
50
-3.0
Min.
Typ. Max.
0.8
1.0
1.2
14.0
11.5
9.0
21.0
15.0
80
100
-2.0
150
-0.8
1.0
G
A
Gain @ NF
O
: V
DS
=3 V, I
DS
= 20 mA
13.0
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression:
V
DS
=5 V, I
DS
=50 mA
1 dB Compressed Gain: V
DS
=5 V, I
DS
=50 mA
Transconductance: V
DS
= 3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
=3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
5-57
5965-8712E
1
2
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