0.5鈥?6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-21170
Features
鈥?Low Noise Figure:
0.9 dB Typical at 4 GHz
鈥?High Associated Gain:
13.0 dB Typical at 4 GHz
鈥?High Output Power:
23.0 dBm Typical P
1 dB
at 4 GHz
鈥?Hermetic Gold-Ceramic
Microstrip Package
housed in a hermetic, high
reliability package. This device is
designed for use in low noise or
medium power amplifier applica-
tions in the 0.5-6 GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
750 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
70 mil Package
Description
The ATF-21170 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 20 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
dB
mmho
mA
V
70
80
-3.0
Min.
Typ. Max.
0.6
0.9
1.2
16.0
13.0
10.0
23.0
13.0
120
120
-1.5
200
-0.8
1.1
G
A
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 20 mA
12.0
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression:
V
DS
=5 V, I
DS
= 80 mA
1 dB Compressed Gain: V
DS
= 5 V, I
DS
= 80 mA
Transconductance: V
DS
=3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
5965-8718E
5-46
1
2
3
