2鈥?6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
Features
鈥?Low Noise Figure:
1.8 dB Typical at 12 GHz
鈥?High Associated Gain:
9.0 dB Typical at 12 GHz
鈥?High Output Power:
17.5 dB Typical at 12 GHz
鈥?Cost Effective Ceramic
Microstrip Package
鈥?Tape-and-Reel Packaging
Option Available
[1]
Description
The ATF-13736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
36 micro-X Package
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
Optimum Noise Figure: V
DS
= 2.5 V, I
DS
= 20 mA
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f =12.0 GHz
f = 12.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
dB
mmho
mA
V
25
40
-4.0
Min.
Typ. Max.
1.5
1.8
2.1
11.5
9.0
7.0
17.5
8.5
55
50
-1.5
90
-0.5
2.2
G
A
Gain @ NF
O
: V
DS
= 2.5 V, I
DS
= 20 mA
8.0
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression:
V
DS
= 4 V, I
DS
= 40 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 40 mA
Transconductance: V
DS
= 2.5 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2.5 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 1 mA
Note:
1. Refer to PACKAGING section 鈥淭ape-and-Reel Packaging for Surface Mount Semiconductors鈥?
5-39
5965-8722E