2 鈥?16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13336
Features
鈥?Low Noise Figure:
1.4 dB Typical at 12 GHz
鈥?High Associated Gain:
9.0 dB Typical at 12 GHz
鈥?High Output Power:
17.5 dBm Typical P
1 dB
at
12 GHz
鈥?Cost Effective Ceramic
Microstrip Package
鈥?Tape-and-Reel Packaging
Option Available
[1]
Description
The ATF-13336 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective micro-
strip package. Its premium noise
figure makes this device appropri-
ate for use in low noise amplifiers
operating in the 2-16 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
36 micro-X Package
Electrical Specifications, T
A
= 25擄C
Symbol
NF
O
Parameters and Test Conditions
Optimum Noise Figure: V
DS
= 2.5 V, I
DS
= 20 mA
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
Units
dB
dB
dB
dB
dB
Min.
Typ. Max.
1.2
1.4
1.6
11.5
9.0
7.5
17.5
8.5
25
40
-4.0
55
50
-1.5
90
-0.5
1.6
G
A
Gain @ NF
O
: V
DS
= 2.5 V, I
DS
= 20 mA
8.0
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Power Output @ 1 dB Gain Compression:
V
DS
= 4 V, I
DS
= 40 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 40 mA
Transconductance: V
DS
= 2.5 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2.5 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 1 mA
f = 12.0 GHz dBm
f = 12.0 GHz
dB
mmho
mA
V
Note:
1. Refer to PACKAGING section 鈥淭ape-and-Reel Packaging for Surface Mount Semiconductors鈥?
5965-8724E
5-36
1
2
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