Low Noise Gallium Arsenide FET
Reliability Data
ATF-10XXX
ATF-13XXX
Description
The following cumulative test
results have been obtained from
testing performed at Hewlett-
Packard in accordance with the
latest revision of MIL-STD-883.
Data was gathered from the
product qualification, reliability
monitor, and engineering evalua-
tion for the LYG GaAs process.
For the purpose of this reliability
data sheet, a failure is any part
which fails to meet the electrical
and/or mechanical specification
listed in the Communications
Components Designer's Catalog.
1. Life Test
A. Demonstrated Performance
Test Name
High Temperature
Operating Life
(O.L.)
High Temperature
Storage (HTS)*
Test Condition
Nominal Bias at
T
ch
= 175擄C, 1000 hrs.
Ambient Temperature
T
A
= 150擄C, 1000 hrs.
225
225,000
0
0
Units
Tested
150
Total
Device Hrs.
15,000
Total
Failure Rate
Failed (%/1K Hours)
0
0
B. Failure Rate Prediction
The failure rate will depend on
the junction temperature of the
device. The estimated life at
different temperatures is calcu-
lated, using the Arrhenius plot
with activation energy of 1.2eV,
and the device thermal resistance
of the stress board is 130擄C/W,
and listed in the following table.
Point
(1)
Junction
Temp.
T
J
(擄C)
175
150
100
47
MTTF*
(hours)
3 x 10
-6
2 x 10
-7
2 x 10
-9
8 x 10
-11
MTTF
FIT
(3)
333
50
.05
.001
90% Confidence Level
(2)
MTTF
(hours)
0.5 x 10
-6
9.5 x 10
-8
9.5 x 10
-8
3.5 x 10
-11
FIT
(3)
2000
105
1.05
.0003
*MTTF data calculated from high temperature Operating Life tests.
1
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