ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
AT847
Repetitive voltage up to
Mean on-state current
Surge current
2500
V
2980
A
39.2
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[擄C]
125
125
125
Value
Unit
BLOCKING
V
V
V
I
I
RRM
RSM
DRM
RRM
DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
V=VRRM
V=VDRM
2500
2600
2500
200
200
V
V
V
mA
mA
125
125
CONDUCTING
I
I
I
V
V
r
T (AV)
T (AV)
TSM
Mean on-state current
Mean on-state current
Surge on-state current
I虜 t
On-state voltage
Threshold voltage
On-state slope resistance
180擄 sin, 50 Hz, Th=55擄C, double side cooled
180擄 sin, 50 Hz, Tc=85擄C, double side cooled
sine wave, 10 ms
without reverse voltage
On-state current =
2100 A
25
125
125
125
2980
2370
39.2
7683 x1E3
1.22
0.85
0.175
A
A
kA
A虜s
V
V
mohm
I虜 t
T
T(TO)
T
SWITCHING
di/dt
dv/dt
td
tq
Q rr
I rr
I
I
H
L
Critical rate of rise of on-state current, min.
Critical rate of rise of off-state voltage, min.
Gate controlled delay time, typical
Circuit commutated turn-off time, typical
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
Latching current, typical
From 75% VDRM up to 3280 A, gate 10V 5ohm
Linear ramp up to 70% of VDRM
VD=100V, gate source 10V, 10 ohm , tr=.5 碌s
dV/dt = 20 V/碌s linear up to 75% VDRM
di/dt=-20 A/碌s, I= 2150 A
VR= 50 V
VD=5V, gate open circuit
VD=12V, tp=30碌s
125
125
25
125
25
25
800
1000
2
400
A/碌s
V/碌s
碌s
碌s
碌C
A
500
1000
mA
mA
GATE
V
I
V
V
I
V
P
P
GT
GT
GD
FGM
FGM
RGM
GM
G
Gate trigger voltage
Gate trigger current
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
VD=12V
VD=12V
VD=VDRM
25
25
125
3.5
400
0.25
30
10
10
V
mA
V
V
A
V
W
W
Pulse width 100 碌s
150
10
MOUNTING
R
R
T
F
th(j-h)
th(c-h)
j
Thermal impedance, DC
Thermal impedance
Operating junction temperature
Mounting force
Mass
ORDERING INFORMATION : AT847 S 25
standard specification
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
11
2
-30 / 125
40.0 / 50.0
1700
擄C/kW
擄C/kW
擄C
kN
g
VDRM&VRRM/100
1
2
3
4
