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AT52BR6408AT Datasheet

  • AT52BR6408AT

  • 64-Mbit Flash, 8-Mbit SRAM (x16 I/O)

  • 37頁

  • ATMEL   ATMEL

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Stack Module Features
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64-Mbit Flash + 8-Mbit SRAM
Power Supply of 2.7V to 3.1V
Data I/O x16
66-ball CBGA Package
64-Mbit Flash Features
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64-megabit (4M x 16) Flash Memory
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2.7V - 3.1V Read/Write
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High Performance
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鈥?Asynchronous Access Time 鈥?70, 85 ns
Sector Erase Architecture
鈥?Eight 4K Word Sectors with Individual Write Lockout
鈥?32K Word Main Sectors with Individual Write Lockout
Typical Sector Erase Time: 32K Word Sectors 鈥?500 ms; 4K Word Sectors 鈥?100 ms
64M, Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not
Being Programmed/Erased
鈥?Memory Plane A: 16M of Memory Including Eight 4K Word Sectors
鈥?Memory Plane B: 16M of Memory Consisting of 32K Word Sectors
鈥?Memory Plane C: 16M of Memory Consisting of 32K Word Sectors
鈥?Memory Plane D: 16M of Memory Consisting of 32K Word Sectors
Suspend/Resume Feature for Erase and Program
鈥?Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
鈥?Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
鈥?30 mA Active
鈥?10 碌A Standby
1.8V I/O Option Reduces Overall System Power
Data Polling and Toggle Bit for End of Program Detection
VPP Pin for Write Protection and Accelerated Program/Erase Operations
RESET Input for Device Initialization
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Common Flash Interface (CFI)
64-Mbit Flash,
8-Mbit SRAM
(x16 I/O)
AT52BR6408A
AT52BR6408AT
Preliminary
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8-Mbit SRAM Features
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8-Mbit (512K x 16)
2.7V to 3.1V V
CC
Operation
70 ns Access Time
Low-power
鈥?2 mA Typical (Active)
鈥?1 碌A Typical (Standby)
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Industrial Temperature Range
Stack Module Description
The AT52BR6408A(T) consists of a 64-Mbit Flash stacked with an 8-Mbit SRAM in a
single CBGA package.
Stack Module Memory Contents
Device
AT52BR6408A(T)
Memory Combination
64M Flash + 8M SRAM
Flash Read Access
Asynchronous, Page Mode
Rev. 3425A鈥揝TKD鈥?/04
1

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