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Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time 鈥?45 ns
Internal Program Control and Timer
8K Word Boot Block with Lockout
Fast Erase Cycle Time 鈥?5 seconds
Word-by-Word Programming 鈥?30 碌s/Word Typical
Hardware Data Protection
Data Polling for End of Program Detection
Typical 10,000 Write Cycles
Description
The AT49BV/LV2048B is a 3-volt only in-system Flash memory. The 2 megabits of
memory is organized as 131,072 words by 16 bits. Manufactured with Atmel鈥檚
advanced nonvolatile CMOS technology, the device offers access times to 45 ns with
power dissipation of just 90 mW over the commercial temperature range.
To allow for simple in-system reprogrammability, the AT49BV/LV2048B does not
require high input voltages for programming. Three-volt-only commands determine the
read and programming operation of the device. Reading data out of the device is simi-
lar to reading from an EPROM. Reprogramming the AT49BV/LV2048B is performed
by erasing a block of data (entire chip or main memory block) and then programming
on a word by word basis. The typical word programming time is a fast 30 碌s. The end
of a program cycle can be optionally detected by the Data Polling feature. Once the
end of a program cycle has been detected, a new access for a read or program can
begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
2-megabit
(128 x 16)
3-volt Only
Flash Memory
AT49BV2048B
AT49LV2048B
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
NC
NC
NC
NC
NC
NC
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
AT49BV/LV2048B TSOP Top View
Type I
Rev. 3279A鈥揊LASH鈥?0/02
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