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鈥?3V Read
鈥?3.1V Programming
Fast Read Access Time 鈥?55 ns
Internal Program Control and Timer
8K Word Boot Block with Lockout
Fast Erase Cycle Time 鈥?10 seconds
Word-by-Word Programming 鈥?20 碌s/Word Typical
Hardware Data Protection
Data Polling for End of Program Detection
Small 10 x 14 mm VSOP Package
Typical 10,000 Write Cycles
Description
The AT49LV1024 and the AT49LV1025 are 3-volt only in-system Flash memories.
Their 1 megabit of memory is organized as 65,536 words by 16 bits. Manufactured
with Atmel鈥檚 advanced nonvolatile CMOS technology, the devices offer access times
to 55 ns with power dissipation of just 90 mW over the commercial temperature range.
The only difference between the AT49LV1024 and the AT49LV1025 is the package.
To allow for simple in-system reprogrammability, the AT49LV1024/1025 does not
require high input voltages for programming. Three-volt-only commands determine the
read and programming operation of the device. Reading data out of the device is simi-
lar to reading from an EPROM. Reprogramming the AT49LV1024/1025 is performed
(continued)
1-megabit
(64K x 16)
3-volt Only
Flash Memory
AT49LV1024
AT49LV1025
Pin Configurations
Pin Name
A0 - A15
CE
OE
WE
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
A9
A10
A11
A12
A13
A14
A15
NC
WE
VCC
NC
CE
I/O15
I/O14
I/O13
I/O12
I/O11
I/O10
I/O9
I/O8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
OE
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
AT49LV1024 VSOP Top View
Type 1
10 x 14 mm
AT49LV1025 PLCC Top View
6
5
4
3
2
1
44
43
42
41
40
I/O13
I/O14
I/O15
CE
NC
NC
VCC
WE
NC
A15
A14
I/O3
I/O2
I/O1
I/O0
OE
NC
A0
A1
A2
A3
A4
18
19
20
21
22
23
24
25
26
27
28
I/O12
I/O11
I/O10
I/O9
I/O8
GND
NC
I/O7
I/O6
I/O5
I/O4
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
A13
A12
A11
A10
A9
GND
NC
A8
A7
A6
A5
Rev. 1278D鈥?7/01
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