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AT49BV6416(T) Datasheet

  • AT49BV6416(T)

  • AT49BV6416(T)/BN6416(T) Advance Information [Updated 5/03. 3...

  • 38頁

  • ETC

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Features
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64-megabit (4M x 16) Flash Memory
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2.7V - 3.6V Read/Write
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High Performance
鈥?Asynchronous Access Time 鈥?70 ns
鈥?Page Mode Read Time 鈥?20 ns
鈥?Synchronous Burst Frequency 鈥?66 MHz
鈥?Configurable Burst Operation
Sector Erase Architecture
鈥?Eight 4K Word Sectors with Individual Write Lockout
鈥?32K Word Main Sectors with Individual Write Lockout
Typical Sector Erase Time: 32K Word Sectors 鈥?500 ms; 4K Word Sectors 鈥?100 ms
64M, Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not
Being Programmed/Erased
鈥?Memory Plane A: 16M of Memory Including Eight 4K Word Sectors
鈥?Memory Plane B: 16M of Memory Consisting of 32K Word Sectors
鈥?Memory Plane C: 16M of Memory Consisting of 32K Word Sectors
鈥?Memory Plane D: 16M of Memory Consisting of 32K Word Sectors
Suspend/Resume Feature for Erase and Program
鈥?Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
鈥?Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
鈥?30 mA Active
鈥?10 碌A(chǔ) Standby
1.8V I/O Option Reduces Overall System Power
Data Polling and Toggle Bit for End of Program Detection
VPP Pin for Write Protection and Accelerated Program/Erase Operations
RESET Input for Device Initialization
TSOP or CBGA Package
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Common Flash Interface (CFI)
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64-megabit
(4M x 16)
Burst/Page
Mode 2.7-volt
Flash Memory
AT49BV6416
AT49BV6416T
AT49BN6416
AT49BN6416T
Advance
Information
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Description
The AT49BN/BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is
divided into multiple sectors and planes for erase operations. The devices can be read
or reprogrammed off a single 2.7V power supply, making them ideally suited for in-sys-
tem programming. The output voltage can be separately controlled down to 1.65V
through the VCCQ supply pin. The devices can be configured to operate in the asyn-
chronous/page read (default mode) or burst read mode (not available for the
AT49BV6416(T)). The burst read mode is used to achieve a faster data rate than is
possible in the asynchronous/page read mode.
If the AVD and the CLK signals are both tied to GND, the device will behave like a
standard asynchronous Flash memory. In the page mode, the AVD signal can be tied
to GND or can be pulsed low to latch the page address. In both cases the CLK can be
tied to GND.
Rev. 2481C鈥揊LASH鈥?/03
1

AT49BV6416(T)相關(guān)型號(hào)PDF文件下載

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  • 英文版
    PROTECTIVE GUARD KB SER SQ&RND
  • 英文版
    COVER DUST POLY FOR KB SERIES
  • 英文版
    CENTER BARRIER BLACK POLY LB SER
  • 英文版
    PROTECTIVE GUARD FOR LB SER SQ
  • 英文版
    Round Pushbutton Switch Cap Black Slip On
  • 英文版
    Round Pushbutton Switch Cap Red Slip On
  • 英文版
    128K x 8 (1M bit), 2.7-Volt (BV)/3-Volt (LV) Read and 2.7-Vo...
  • 英文版
    1-Megabit 128K x 8 5-volt Only Flash Memory
    ATMEL
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    1-Megabit 128K x 8 5-volt Only Flash Memory
    ATMEL [ATM...
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    2-Megabit 256K x 8 5-volt Only Flash Memory
    ATMEL
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    2-megabit (256K x 8) 5-volt Only Flash Memory
    ATMEL [ATM...
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    2-Megabit 256K x 8 5-volt Only Flash Memory
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    4-Megabit CMOS Flash Memory
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    ATMEL Corporation [4-Megabit 512K x 8/ 256K x 16 CMOS Flash...
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    8-Megabit 5-volt Only Flash Memory
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    8-Megabit 1M x 8 5-volt Only Flash Memory
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    ATMEL Corporation [1-Megabit 128K x 8 5-volt Only CMOS Flas...
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    ATMEL Corporation [2-Megabit 256K x 8 5-volt Only CMOS Flas...
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    4 Megabit 512K x 8 5-volt Only CMOS Flash Memory
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    4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
    ATMEL [ATM...

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