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AT49BV002AT Datasheet

  • AT49BV002AT

  • 2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash M...

  • 19頁

  • ATMEL   ATMEL

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Features
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Single Supply for Read and Write: 2.7 to 3.6V
Fast Read Access Time 鈥?70 ns
Internal Program Control and Timer
Sector Architecture
鈥?One 16K Bytes Boot Block with Programming Lockout
鈥?Two 8K Bytes Parameter Blocks
鈥?Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes)
Fast Erase Cycle Time 鈥?4 Seconds
Byte-by-Byte Programming 鈥?30 碌s/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
鈥?15 mA Active Current
鈥?50 碌A(chǔ) CMOS Standby Current
Typical 10,000 Write Cycles
Green (Pb/Halide-free) Packaging Option
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2-megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV002A
AT49BV002AN
AT49BV002AT
AT49BV002ANT
1. Description
The AT49BV002A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.
Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with
Atmel鈥檚 advanced nonvolatile CMOS technology, the device offers access times to
70 ns with power dissipation of just 54 mW over the industrial temperature range.
When the device is deselected, the CMOS standby current is less than 50 碌A(chǔ). For the
AT49BV002AN(T) pin 1 for PLCC package and pin 9 for the TSOP package are no
connect pins. To allow for simple in-system reprogrammability, the
AT49BV002A(N)(T) does not require high input voltages for programming. Five-volt-
only commands determine the read and programming operation of the device. Read-
ing data out of the device is similar to reading from an EPROM; it has standard CE,
OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV002A(N)(T)
is performed by erasing a block of data and then programming on a byte by byte
basis. The byte programming time is a fast 30
碌s.
The end of a program cycle can be
optionally detected by the DATA polling feature. Once the end of a byte program cycle
has been detected, a new access for a read or program can begin. The typical num-
ber of program and erase cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command sequence; the device inter-
nally controls the erase operations. There are two 8K byte parameter block sections,
four main memory blocks, and one boot block.
The device has the capability to protect the data in the boot block; this feature is
enabled by a command sequence. The 16K-byte boot block section includes a repro-
gramming lock out feature to provide data integrity. The boot sector is designed to
contain user secure code, and when the feature is enabled, the boot sector is pro-
tected from being reprogrammed.
In the AT49BV002AN(T), once the boot block programming lockout feature is
enabled, the contents of the boot block are permanent and cannot be changed. In the
AT49BV002A(T), once the boot block programming lockout feature is enabled, the
contents of the boot block cannot be changed with input voltage levels of 5.5 volts or
less.
3353F鈥揊LASH鈥?/05

AT49BV002AT相關(guān)型號PDF文件下載

  • 型號
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    廠商
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  • 英文版
    PROTECTIVE GUARD KB SER SQ&RND
  • 英文版
    COVER DUST POLY FOR KB SERIES
  • 英文版
    CENTER BARRIER BLACK POLY LB SER
  • 英文版
    PROTECTIVE GUARD FOR LB SER SQ
  • 英文版
    Round Pushbutton Switch Cap Black Slip On
  • 英文版
    Round Pushbutton Switch Cap Red Slip On
  • 英文版
    128K x 8 (1M bit), 2.7-Volt (BV)/3-Volt (LV) Read and 2.7-Vo...
  • 英文版
    1-Megabit 128K x 8 5-volt Only Flash Memory
    ATMEL
  • 英文版
    1-Megabit 128K x 8 5-volt Only Flash Memory
    ATMEL [ATM...
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    2-Megabit 256K x 8 5-volt Only Flash Memory
    ATMEL
  • 英文版
    2-megabit (256K x 8) 5-volt Only Flash Memory
    ATMEL [ATM...
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    2-Megabit 256K x 8 5-volt Only Flash Memory
    ATMEL [ATM...
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    4-Megabit CMOS Flash Memory
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    ATMEL Corporation [4-Megabit 512K x 8/ 256K x 16 CMOS Flash...
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  • 英文版
    8-Megabit 5-volt Only Flash Memory
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    8-Megabit 1M x 8 5-volt Only Flash Memory
    ATMEL
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    ATMEL Corporation [1-Megabit 128K x 8 5-volt Only CMOS Flas...
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    ATMEL Corporation [2-Megabit 256K x 8 5-volt Only CMOS Flas...
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  • 英文版
    4 Megabit 512K x 8 5-volt Only CMOS Flash Memory
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  • 英文版
    4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
    ATMEL [ATM...

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