Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
AT-41486
Features
鈥?Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
鈥?High Associated Gain:
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
鈥?High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
鈥?Surface Mount Plastic
Package
鈥?Tape-and-Reel Packaging
Option Available
[1]
Note:
1. Refer to 鈥淭ape-and-Reel Packaging for
Semiconductor Devices鈥?
BASE
1
414
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
鈩?/div>
at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41486 bipolar transistor is
fabricated using Hewlett-Packard鈥檚
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
86 Plastic Package
Pin Connections
EMITTER
4
COLLECTOR
3
2
EMITTER
Description
Hewlett-Packard鈥檚 AT-41486 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41486 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
4-129
5965-8928E
AGILENT
1
2
3
4
5
