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AT29LV512 Datasheet

  • AT29LV512

  • 512K (64K x 8) 3-volt Only Flash Memory

  • 680.00KB

  • 16頁

  • ATMEL   ATMEL

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AT29LV512
Features
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Single Supply Voltage, Range 3V to 3.6V
3-Volt-Only Read and Write Operation
Software Protected Programming
Low Power Dissipation
15 mA Active Current
20
碌A(chǔ)
CMOS Standby Current
Fast Read Access Time - 200 ns
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
512K (64K x 8)
3-volt Only
CMOS Flash
Memory
Description
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manu-
factured with Atmel鈥檚 advanced nonvolatile CMOS technology, the device offers ac-
cess times to 200 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 20
碌A(chǔ).
The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
(continued)
Pin Configurations
Pin Name
A0 - A15
CE
OE
WE
Function
Addresses
Chip Enable
Output Enable
Write Enable
AT29LV512
PLCC Top View
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
0177I
4-43

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