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Single Supply Voltage, Range 3V to 3.6V
3-Volt-Only Read and Write Operation
Software Protected Programming
Low Power Dissipation
15 mA Active Current
20
碌A(chǔ)
CMOS Standby Current
Fast Read Access Time - 200 ns
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (64 bytes/sector)
Internal Address and Data Latches for 64-Bytes
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
256K (32K x 8)
3-volt Only
CMOS Flash
Memory
Description
The AT29LV256 is a 3-volt-only in-system Flash Programmable Erasable Read Only
Memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits.
Manufactured with Atmel鈥檚 advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW over the commercial
temperature range. When the device is deselected, the CMOS standby current is less
than 20
碌A(chǔ).
The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
(continued)
PLCC Top View
Pin Configurations
Pin Name
A0 - A14
CE
OE
WE
Function
Addresses
Chip Enable
Output Enable
Write Enable
AT29LV256
I/O0 - I/O7 Data Inputs/Outputs
NC
DC
No Connect
Don鈥檛 Connect
TSOP Top View
Type 1
0563A
4-33